Samsung has unveiled a breakthrough ferroelectric transistor (FeFET) memory technology capable of boosting storage capacity while cutting energy consumption by up to 96%, addressing a critical power challenge for next-generation devices and artificial intelligence infrastructure.
The South Korean electronics giant announced the development of new memory based on these FeFETs. This innovation promises to dramatically increase storage capacity while drastically reducing energy consumption, a major hurdle for current memory architecture.
First tests by Samsung researchers demonstrated an energy consumption reduction of up to 96% compared to conventional NAND technology. NAND is currently used in most electronic devices.
The efficiency stems from a ferroelectric layer of hafnium doped with zirconium. This material allows memory cells to maintain stable states without requiring a high step voltage. Current memory technologies need this voltage.
This approach not only uses significantly less electricity but also minimizes “read/step disturbances.” This translates to better data retention and enhanced component durability.
In terms of density, FeFETs can store up to 5 bits per cell. They maintain stability equal to or superior to NAND technology. Researchers also noted that energy consumption remains minimal even in stacked (3D) structures or with short channel lengths. This resolves a key obstacle for multilevel storage.
The current paradigm in NAND flash memory links increased storage capacity directly to higher energy consumption. Samsung’s new FeFET approach breaks this link. It allows for devices with much more storage space without sacrificing battery life.
This technology is expected to be implemented in the next generation of mobile devices and servers. Its introduction comes at a crucial time. Samsung faces soaring demand for memory chips due to the rapid expansion of artificial intelligence.
Reports suggest Samsung has struggled to meet the demand for AI server chips. This could lead to price increases in 2026 and 2027.
However, commercial timelines for FeFET-based memories have not yet been revealed. Before mass production can be considered, the technology must undergo rigorous testing. This will ensure it offers the stability and performance users expect from current NAND memories.